We have investigated the effect of the deposition temperature in the structural parameters and the metal–insulator phase transition of VO₂ thin films, produced by sputtering technique in a reactive atmosphere. Samples were produced as monolayers and deposited on SiO₂/Si (100) substrates at different temperatures. Structural characterization by X–ray diffraction (XRD) showed the presence of VO₂ (M1) phase. The lattice parameters and the unit cell volume change slightly with increasing deposition temperature. Electrical characterization of resistance as a function of temperature using the four point method shows reversible phase transition with thermal hysteresis in all samples. As the deposition temperature increases, an increase in the transition temperature (T_MIT) between 67 ° C and 73 ° C for the heating cycle is observed, along with a decrease in the variation of the electrical resistance,. Also, decreases in the variation of the electrical resistance affecting the shape and size of the hysteresis loop. Experimental results show that the VO₂ thin films are polycrystalline and the temperature deposition affects the structural parameters and metal–insulator transition, explaining the appearance of stress in the material.